Publications

2008
2007
1999
1998

2008

Ritter, K. A.; Lyding, J. W., Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy. Nanotechnology 2008, 19, (1).

2007

Albrecht, P. M.; Barraza-Lopez, S.; Lyding, J. W., Preferential orientation of a chiral semiconducting carbon nanotube on the locally depassivated Si(100)-2x1 : H surface identified by scanning Tunneling microscopy. Small 2007, 3, (8), 1402-1406.
Albrecht, P. M.; Barraza-Lopez, S.; Lyding, J. W., Scanning tunnelling spectroscopy and ab initio calculations of single-walled carbon nanotubes interfaced with highly doped hydrogen-passivated Si(100) substrates. Nanotechnology 2007, 18, (9).
Albrecht, P. M.; Lyding, J. W., Lateral manipulation of single-walted carbon nanotubes on H-passivated Si(100) surfaces with an ultrahigh-vacuum scanning tunneling microscope. Small 2007, 3, (1), 146-152.
Albrecht, P. M.; Lyding, J. W., Local stabilization of single-walled carbon nanotubes on Si(100)-2x1 : H via nanoscale hydrogen desorption with an ultrahigh vacuum scanning tunnelling microscope. Nanotechnology 2007, 18, (12)..
Carmichael, E. S.; Ballard, J. B.; Lyding, J. W.; Gruebele, M., Frequency-modulated, single-molecule absorption detected by scanning tunneling microscopy. Journal of Physical Chemistry C 2007, 111, (8), 3314-3321.
Ruppalt, L. B.; Lyding, J. W., Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy. Nanotechnology 2007, 18, (21).
Ruppalt, L. B.; Lyding, J. W., Metal-induced gap states at a carbon-nanotube intramolecular heterojunction observed by scanning tunneling microscopy. Small 2007, 3, (2), 280-284.

1999

Hersam, M. C., Abeln, G. C., and Lyding, J. W., An Approach for Efficiently Locating and Electrically Contacting Nanostructures Fabricated via UHV-STM Lithography on Si(100)," Microelectronic Engineering, 47, p. 235.
Kizilyalli, I. C., Hess, K., and Lyding, J. W., Channel Hot Electron Degradation-delay in MOS Transistors Due to Deuterium Anneal," Chapter 13, The VLSI Handbook (CRC Press LLC)..
Lee, J., Epstein, Y., Berti, A. C., Huber, J., Hess, K., and Lyding, J. W., The Effect of Deuterium Passivation at Different Steps of CMOS Processing on Lifetime Improvements of CMOS Transistors," IEEE Transactions on Electron Devices, 46, p. 1812.

1998

Foley, E. T., Kam, A. F., Lyding, J. W., and Avouris, P. H., "Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)," Physical Review Letters, 80/6, pp. 1336-1339.
Lyding, J. W., Hess, K., Abeln, G. C., Thompson, D. S., Moore, J. S., Hersam, M. C., Foley, E. T., Lee, J., Chen, Z., Hwang, S. T., Choi, H., Avouris, P. H., and Kizilyalli, I. C., "UHV-STM Nanofabrication and Hydrogen/Deuterium Desorption from Silicon Surfaces: Implications for CMOS Technology," Applied Surface Science, 130-132, p. 221.